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| Ordering number : ENN8231 3LN03SS N-Channel Silicon MOSFET 3LN03SS Features * * * * General-Purpose Switching Device Applications Low ON-resistance. High-speed switching. 2.5V drive. High ESD Voltage (TYP 300V) [Built-in one side diode for protection between Gate-to-Source]. Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage (*1) Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Conditions Ratings 30 10 0.35 1.4 0.15 150 --55 to +150 Unit V V A A A A W (*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source. Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=100A VDS=10V, ID=180mA ID=180mA, VGS=4V ID=90mA, VGS=2.5V ID=10mA, VGS=1.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 30 1 1 0.4 0.36 0.6 0.7 0.8 1.6 30 7 3.5 0.9 1.15 2.4 1.3 typ max Unit V A A V S pF pF pF Marking : YG Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22805PE TS IM TA-100963 No.8231-1/4 3LN03SS Continued from preceding page. Parameter Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=350mA VDS=10V, VGS=4V, ID=350mA VDS=10V, VGS=4V, ID=350mA IS=350mA, VGS=0 Ratings min typ 8 4.5 11 6 1 0.4 0.2 0.88 1.2 max Unit ns ns ns ns nC nC nC V Package Dimensions unit : mm 2179A Switching Time Test Circuit VIN Top View 1.4 Side View 4V 0V VIN VDD=15V 0.25 3 0.1 PW=10s D.C.1% ID=180mA RL=83 D VOUT 0.8 1 0.45 0.2 Side View 2 0.3 1.4 G 0.3 Bottom View 0.07 3 0.6 1 : Gate 2 : Source 3 : Drain SANYO : SSFP 3LN03SS P.G 50 S 0.4 ID -- VDS V 3.0 V 2.5 0.07 2 1 0.8 ID -- VGS Ta= --25 C VDS=10V 75 C 4. 6.0V 0V 3.5V 2.0 V Drain Current, ID -- A Drain Current, ID -- A 0.2 VGS=1.5V 0.4 0.1 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IT07511 Drain-to-Source Voltage, VDS -- V 5.0 IT07510 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 --60 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 25 C Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- 4.0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ta= 7 RDS(on) -- Ta 3.0 0mA I D=9 5C --25 C =2.5V , VGS 2.0 ID=90mA 180mA 0m I D=18 =4.0V A, V GS 1.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 --40 --20 0 20 40 60 25 C 80 100 0.3 0.6 120 140 Gate-to-Source Voltage, VGS -- V IT07512 Ambient Temperature, Ta -- C IT08161 No.8231-2/4 3LN03SS 3 yfs -- ID VDS=10V 3 2 1.0 IF -- VSD VGS=0 Forward Transfer Admittance, yfs -- S 2 Forward Current, IF -- A 1.0 7 5 3 2 7 5 3 5C 0.4 0.1 7 5 3 2 25 0.1 7 5 0.01 2 3 5 7 0.1 2 3 5 Drain Current, ID -- A 3 1.0 IT07514 7 0.01 0.2 25C C 0.6 Ta= 7 75 C 0.8 --25 C 1.0 Ta= C --25 2 1.2 1.4 IT07515 SW Time -- ID VDD=15V VGS=4V Ciss, Coss, Crss -- pF 100 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 2 Ciss td(off) 10 7 5 td(on) tf tr 10 7 5 3 Coss Crss 3 2 2 0.1 1.0 2 3 5 7 Drain Current, ID -- A 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.0 IT07516 3 0 5 10 15 20 25 30 IT08960 Drain-to-Source Voltage, VDS -- V VGS -- Qg RDS(on) -- ID Static Drain-to-Source On-State Resistance, RDS(on) -- Gate-to-Source Voltage, VGS -- V VDS=10V ID=0.35A VGS=4V 2 1.0 7 Ta=75C 25C --25C 5 0.9 1.0 3 0.01 2 3 5 7 0.1 2 3 5 Total Gate Charge, Qg -- nC 3 IT07518 7 5 RDS(on) -- ID VGS=2.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Drain Current, ID -- A 7 1.0 IT07519 RDS(on) -- ID VGS=1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- 2 3 1.0 Ta=75C 2 Ta=75C --25C 7 25C --25C 1.0 25C 5 7 5 0.01 3 0.01 2 3 5 7 0.1 2 3 5 Drain Current, ID -- A 1.0 IT07520 7 2 3 5 7 0.1 2 3 Drain Current, ID -- A IT07521 No.8231-3/4 3LN03SS 0.20 PD -- Ta Allowable Power Dissipation, PD -- W 0.15 0.10 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT07522 Note on usage : Since the 3LN03SS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. PS No.8231-4/4 |
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